- RS Best.-Nr.:
- 178-4657
- Herst. Teile-Nr.:
- FCMT250N65S3
- Marke:
- onsemi
6080 lieferbar innerhalb von 6-8 Werktagen.
Im Warenkorb
Preis pro Stück (In einer VPE à 10)
CHF.1.743
Stück | Pro Stück | Pro Packung* |
10 + | CHF.1.743 | CHF.17.472 |
*Bitte VPE beachten |
- RS Best.-Nr.:
- 178-4657
- Herst. Teile-Nr.:
- FCMT250N65S3
- Marke:
- onsemi
Mehr Infos und technische Dokumente
Rechtliche Anforderungen
- Ursprungsland:
- PH
Produktdetails
SUPERFET III MOSFET is ON Semiconductors brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
700 V @ TJ = 150 oC
Leadless Ultra-thin SMD package
Kelvin contact
Ultra Low Gate Charge (Typ. Qg = 24 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)
Optimized Capacitance
Typ. RDS(on) = 210 mΩ
Moisture Sensitivity Level 1 guarantee
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
High power density
Low gate noise and switching loss
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Telecommunication
Industrial
End Products:
Telecom / Server
Adapter
LED Lighting
Leadless Ultra-thin SMD package
Kelvin contact
Ultra Low Gate Charge (Typ. Qg = 24 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)
Optimized Capacitance
Typ. RDS(on) = 210 mΩ
Moisture Sensitivity Level 1 guarantee
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
High power density
Low gate noise and switching loss
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Telecommunication
Industrial
End Products:
Telecom / Server
Adapter
LED Lighting
Technische Daten
Eigenschaft | Wert |
---|---|
Channel-Typ | N |
Dauer-Drainstrom max. | 12 A |
Drain-Source-Spannung max. | 650 V |
Gehäusegröße | Power88 |
Montage-Typ | SMD |
Pinanzahl | 4 |
Drain-Source-Widerstand max. | 250 mΩ |
Channel-Modus | Enhancement |
Gate-Schwellenspannung max. | 4.5V |
Gate-Schwellenspannung min. | 2.5V |
Verlustleistung max. | 90 W |
Transistor-Konfiguration | Einfach |
Gate-Source Spannung max. | ±30 V |
Gate-Ladung typ. @ Vgs | 24 nC @ 10 V |
Anzahl der Elemente pro Chip | 1 |
Breite | 8mm |
Länge | 8mm |
Betriebstemperatur max. | +150 °C |
Diodendurchschlagsspannung | 1.2V |
Betriebstemperatur min. | –55 °C |
Höhe | 1.05mm |