Vishay Schaltdiode 300mA THT 50V DO-35 2-Pin Siliziumdiode
- RS Best.-Nr.:
- 180-8609
- Herst. Teile-Nr.:
- 1N4150TR
- Marke:
- Vishay
11400 lieferbar innerhalb von 6-8 Werktagen.
Im Warenkorb
Preis pro Stück (In einer VPE à 200)
CHF.0.095
| Stück | Pro Stück | Pro Packung* |
| 200 - 800 | CHF.0.095 | CHF.18.48 |
| 1000 - 1800 | CHF.0.084 | CHF.16.59 |
| 2000 - 4800 | CHF.0.074 | CHF.13.86 |
| 5000 - 9800 | CHF.0.053 | CHF.10.08 |
| 10000 + | CHF.0.042 | CHF.9.24 |
| *Bitte VPE beachten | ||
- RS Best.-Nr.:
- 180-8609
- Herst. Teile-Nr.:
- 1N4150TR
- Marke:
- Vishay
Mehr Infos und technische Dokumente
Rechtliche Anforderungen
- Ursprungsland:
- CN
Produktdetails
Vishay Switching Diode
The Vishay switching diode has an electrical rating of 50V reverse voltage and 100nA reverse current. A switching diode is a two-terminal PN junction device that can be used to switch signals or act as a rectifier at low voltages. It has a forward current of 200mA and forward voltage of 1V.
Features and Benefits
• High forward current capability
• It is a silicon epitaxial small signal fast switching device
• Low forward voltage drop
• Marking type is 1N4150
• Operating temperature ranges between -65°C and 175°C
• Power dissipation is 500mW
• Recovery time is 4ns
• Through hole mounting type
• It is a silicon epitaxial small signal fast switching device
• Low forward voltage drop
• Marking type is 1N4150
• Operating temperature ranges between -65°C and 175°C
• Power dissipation is 500mW
• Recovery time is 4ns
• Through hole mounting type
Applications
• Fast switching devices
• General purpose use in computers
• Industrial applications
• Microcontrollers
• General purpose use in computers
• Industrial applications
• Microcontrollers
Certifications
• AEC-Q101
• E3 level certified
• E3 level certified
Technische Daten
Eigenschaft | Wert |
|---|---|
| Durchlassstrom max. | 300mA |
| Montage-Typ | THT |
| Sperrspannung max. | 50V |
| Gehäusegröße | DO-35 |
| Diodentechnologie | Siliziumdiode |
| Pinanzahl | 2 |