Vishay SUD08P06-155L-GE3 IGBT
- RS Best.-Nr.:
- 180-8117
- Herst. Teile-Nr.:
- SUD08P06-155L-GE3
- Marke:
- Vishay
Mengenrabatt verfügbar
Zwischensumme (1 Packung mit 20 Stück)*
CHF.17.86
Nur noch Restbestände
- Letzte 2’160 Einheit(en) versandfertig von einem anderen Standort
Stück | Pro Stück | Pro Packung* |
|---|---|---|
| 20 - 80 | CHF.0.893 | CHF.17.83 |
| 100 - 180 | CHF.0.861 | CHF.17.28 |
| 200 - 480 | CHF.0.819 | CHF.16.40 |
| 500 - 980 | CHF.0.788 | CHF.15.69 |
| 1000 + | CHF.0.735 | CHF.14.76 |
*Richtpreis
- RS Best.-Nr.:
- 180-8117
- Herst. Teile-Nr.:
- SUD08P06-155L-GE3
- Marke:
- Vishay
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Produktdetails
Vishay MOSFET
The Vishay MOSFET is a P-channel, TO-252-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 52mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 20.8W. It can be used in load switches for portable devices. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET