Infineon 1 MB SRAM 64K, 16 / Wort, SOJ 44-Pin

Abbildung stellvertretend für Produktreihe

Alle SRAM anzeigen
Lagerbestand aktuell unbekannt
RS Best.-Nr.:
194-8911
Herst. Teile-Nr.:
CY7C1021D-10VXI
Marke:
Infineon
Finden Sie ähnliche Produkte, indem Sie ein oder mehrere Eigenschaften auswählen.
Alle auswählen

Marke

Infineon

Produkt Typ

SRAM

Speicher Größe

1MB

Organisation

64K x 16 bit

Anzahl der Wörter

64K

Anzahl der Bits pro Wort

16

Zugriffszeit max.

10ns

Timing Typ

Asynchron

Minimale Versorgungsspannung

5V

Maximale Versorgungsspannung

3.6V

Montageart

Durchsteckmontage

Gehäusegröße

SOJ

Betriebstemperatur min.

-40°C

Maximale Betriebstemperatur

85°C

Pinanzahl

44

Länge

28.7mm

Breite

10.29mm

Normen/Zulassungen

RoHS

Höhe

3.05mm

This device has an automatic power down feature that significantly reduces power consumption when deselected. The input and output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A15). Read from the device by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7.

Verwandte Links